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| 25V N-Channel Power MOSFET General Description The AAT7103 25V N-Channel Power MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using the ultra-high density proprietary TrenchDMOS technology, the product demonstrates high power handling and small size. AAT7103 Features * * * VDS(MAX) = 25V ID(MAX)(1) = 6.8 A @ 25C Low RDS(ON): * 26 m @VGS = 4.5V * 41 m @VGS = 2.5V Applications * * * Battery Packs Cellular & Cordless Telephones PDAs, Camcorders, and Cell Phones Dual SOP-8 Package Preliminary Information Top View D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value 25 12 6.8 5.4 24 1.8 2.0 1.25 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TA = 25C Maximum Power Dissipation 1 TA = 70C Operating Junction and Storage Temperature Range A W C Thermal Characteristics Symbol RJA RJA2 RJF Description Typical Junction-to-Ambient steady state, one FET on Maximum Junction-to-Ambient Figure, t < 10 sec. 1 Typical Junction-to-Foot, one FET on 1 2 Value 100 62.5 35 Units C/W C/W C/W 7103.2003.04.0.61 1 25V N-Channel Power MOSFET Electrical Characteristics Symbol Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 3 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current 3 AAT7103 (TJ=25C unless otherwise noted) Conditions VGS=0V, ID=250A VGS=4.5V, ID=6.8A VGS=2.5V, ID=5.4A VGS=4.5V ,VDS=5V (Pulsed) VGS=VDS, ID=250A VGS= 12V, VDS=0V VGS=0V, VDS=25V VGS=0V, VDS=20V, TJ=70C VDS=5V, ID=6.8A VDS=15V, RD=2.2, VGS=4.5V VDS=15V, RD=2.2, VGS=4.5V VDS=15V, RD=2.2, VGS=4.5V VDD=15V, VGS=10V, RD=2.2, RG=6 VDD=15V, VGS=10V, RD=2.2, RG=6 VDD=15V, VGS=10V, RD=2.2, RG=6 VDD=15V, VGS=10V, RD=2.2, RG=6 3 Min 25 Typ Max Units V 19 28 24 0.6 26 41 m A V nA A S 100 1 5 20 13 1.9 2.9 15 18 36 27 19 gfs Forward Transconductance 3 Dynamic Characteristics 4 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 nC ns VGS=0, IS=6.8A 1.5 1.8 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RFA is determined by PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Steady state thermal response while mounted on a 1" x 1" PCB with maximum copper area is provided for comparison with other devices. This test condition approximates many battery pack applications. Note 3: Pulsed measurement 300 s, single pulse. Note 4: Guaranteed by design. Not subject to production testing. 2 7103.2003.04.0.61 25V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 32 AAT7103 Transfer Characteristics 32 5V 4.5V 24 4V 3.5V 3V 2.5V VD=VG 24 25C -55C IDS (A) 16 2V ID (A) 125C 16 8 8 1.5V 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 0 VDS (V) VGS (V) On-Resistance vs. Drain Current 60 50 On-Resistance vs. Gate to Source Voltage 60 ID = 5.5A 50 RDS(ON) (m) 30 20 10 0 0 8 16 24 32 RDS(ON) (m) 40 VGS = 2.5 V 40 30 20 10 0 0 1 2 3 4 5 VGS = 4.5 V ID (A) VGS (V) Gate Charge 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 0.1 0 Source-Drain Diode Forward Voltage 100 VD=15V ID=5.5A IS (A) 10 VGS (V) TJ = 150C TJ = 25C 1 0.2 0.4 0.6 0.8 1 1.2 QG, Charge (nC) 7103.2003.04.0.61 VSD (V) 3 25V N-Channel Power MOSFET Ordering Information Package SOP-8 Marking 7103 Part Number (Tape and Reel) AAT7103IAS-T1 AAT7103 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information 3.90 0.10 4.90 0.10 6.00 0.20 0.375 0.125 1.55 0.20 45 0.175 0.075 4 4 0.235 0.045 0.825 0.445 0.42 0.09 x 8 1.27 BSC All dimensions in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 7103.2003.04.0.61 |
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